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French Electronic Distributor since 1988
TQFPManufacturer:
SANYO
Mfr.Part #:
K4S641632K
Datasheet:
ECCN (US):
EAR99
Automotive:
No
PPAP:
No
DRAM Type:
SDRAM
EDA/CAD Models:
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GENERAL DESCRIPTIONThe K4S640832K / K4S641632K is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.FEATURES• JEDEC standard 3.3V power supply• LVTTL compatible with multiplexed address• Four banks operation• MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)• All inputs are sampled at the positive going edge of the system clock• Burst read single-bit write operation• DQM (x8) & L(U)DQM (x16) for masking• Auto & self refresh• 64ms refresh period (4K cycle)• Pb/Pb-free Package• RoHS compliant for Pb-free Package
ECCN (US) | EAR99 | Part Status | Obsolete |
Automotive | No | PPAP | No |
DRAM Type | SDRAM | Chip Density (bit) | 64M |
Organization | 4Mx16 | Number of Internal Banks | 4 |
Number of Words per Bank | 1M | Number of Bits/Word (bit) | 16 |
Data Bus Width (bit) | 16 | Maximum Clock Rate (MHz) | 133 |
Maximum Access Time (ns) | 5.4|6 | Address Bus Width (bit) | 14 |
Interface Type | LVTTL | Minimum Operating Supply Voltage (V) | 3 |
Maximum Operating Supply Voltage (V) | 3.6 | Operating Current (mA) | 85 |
Minimum Operating Temperature (°C) | 0 | Maximum Operating Temperature (°C) | 70 |
Number of I/O Lines (bit) | 16 | Packaging | Tape and Reel |
Mounting | Surface Mount | PCB changed | 54 |
Pin Count | 54 | Lead Shape | Gull-wing |
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