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K4X51163PG-FGC6 +BOM

SAMSUNG Inventory

Key Features

1.8V power supply, 1.8V I/O power

Double-data-rate architecture; two data transfers per clock cycle

Bidirectional data strobe(DQS)

Four banks operation

1 /CS

1 CKE

Differential clock inputs(CK and CK)

MRS cycle with address key programs

- CAS Latency ( 2, 3 )

- Burst Length ( 2, 4, 8, 16 )

- Burst Type (Sequential & Interleave)

- Partial Self Refresh Type ( Full, 1/2, 1/4 Array )

- Output Driver Strength Control ( Full, 1/2, 1/4, 1/8 )

Internal Temperature Compensated Self Refresh

Deep Power Down Mode

All inputs except data & DM are sampled at the positive going edge of the system clock(CK).

Data I/O transactions on both edges of data strobe, DM for masking.

Edge aligned data output, center aligned data input.

No DLL; CK to DQS is not synchronized.

LDM, UDM for write masking only.

Auto refresh duty cycle

- 7.8us for -25 to 85 C

SAMSUNG Original Stock
SAMSUNG Inventory

Specifications

Product Category Memory ICs

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