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KSC3503DSTU +BOM

Bipolar (BJT) Transistor NPN 300 V 100 mA 150MHz 7 W Through Hole TO-126-3

KSC3503DSTU General Description

Bipolar (BJT) Transistor NPN 300 V 100 mA 150MHz 7 W Through Hole TO-126-3

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Key Features

  • High Current Handling
  • Low Input Noise
  • Fast Rise Time and Fall Time
  • Good Linearity and Gain
  • Compact Package Size
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Application

  • Great for various tasks.
  • Can handle any job with ease.
  • Essential for daily use.
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Specifications

Source Content uid KSC3503DSTU Pbfree Code Yes
Part Life Cycle Code Active Reach Compliance Code compliant
ECCN Code EAR99 Factory Lead Time 11 Weeks, 4 Days
Application AMPLIFIER Configuration SINGLE
DC Current Gain-Min (hFE) 60 JEDEC-95 Code TO-126
JESD-30 Code R-PSFM-T3 Number of Elements 1
Number of Terminals 3 Polarity/Channel Type NPN
Surface Mount NO Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Transistor Element Material SILICON

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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