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See Technical Specifications

MBT6429DW1T1G +BOM

The compact SC-88 package makes it suitable for small and portable devices

Manufacturer:

onsemi
Mfr.Part #:

MBT6429DW1T1G
Datasheet:

MBT6429DW1T1G Datasheet (PDF)
Transistor Type:

2 NPN (Dual)
Current - Collector (Ic) (Max):

200mA
Voltage - Collector Emitter Breakdown (Max):

45V
Vce Saturation (Max) @ Ib, Ic:

600mV @ 5mA, 100mA
EDA/CAD Models:

Request Free CAD Models for MBT6429DW1T1G

MBT6429DW1T1G General Description

The MBT6429DW1T1G product is a versatile Dual NPN Bipolar Transistor, ideal for a wide range of general purpose amplifier applications. Its compact design, housed in the SOT-363/SC-88 package, makes it perfect for low power surface mount applications where space is limited. With its excellent performance and reliability, this transistor is a trusted choice for engineers and designers looking to optimize their amplification circuits

Key Features

SMT Assembly Capable
RoHS Compliance Ensured
Green Product Solution Available
Low Power Consumption Option
Eco-Friendly Manufacturing Process Used
Data Security and Reliability Guarantee

Specifications

Transistor Type	2 NPN (Dual)	Current - Collector (Ic) (Max)	200mA
Voltage - Collector Emitter Breakdown (Max)	45V	Vce Saturation (Max) @ Ib, Ic	600mV @ 5mA, 100mA
Current - Collector Cutoff (Max)	100nA	DC Current Gain (hFE) (Min) @ Ic, Vce	500 @ 100µA, 5V
Power - Max	150mW	Frequency - Transition	700MHz
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	MBT6429