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MBT3904DW1T1G +BOM
Transistor for small electronic circuits, featuring a maximum current of 0.2A and a voltage rating of 40V
SC-88-6 , SC-70-6 , SOT-363-6-
Manufacturer:
-
Mfr.Part #:
MBT3904DW1T1G
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Datasheet:
-
Case Outline:
419B-02
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MSL Temp (°C):
260
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Container Type:
REEL
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Mounting Style:
SMD/SMT
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EDA/CAD Models:
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Availability: 5970 PCS
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MBT3904DW1T1G General Description
The MBT3904DW1T1G is a general-purpose NPN bipolar junction transistor (BJT). It is designed for use in a variety of electronic applications where amplification and switching of electrical signals are required. The "DW1T1G" in the part number indicates the specific package type and manufacturing details.
Key Features
- h
- FE
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- Available in 8 mm, 7-inch/3,000 Unit Tape and Reel
- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS CompliantCapable
Application
- Amplifiers: They are used in amplification stages of audio amplifiers, RF amplifiers, and operational amplifier (op-amp) circuits.
- Switching Circuits: NPN transistors function as electronic switches in digital logic circuits and switching power supplies.
- Signal Modulation: In RF circuits, they are used for amplitude modulation (AM) and frequency modulation (FM).
- Signal Processing: NPN transistors are utilized in signal processing applications such as analog signal conditioning and filtering.
- Oscillator Circuits: They play a crucial role in oscillator circuits for signal generation and clock generation in digital circuits.
- Voltage Regulation: In voltage regulator circuits, they help maintain a stable output voltage.
- Light Sensing: NPN transistors are used in optoelectronic applications, including light-sensitive circuits like light-dependent resistors (LDRs) and phototransistors.
- Electronic Projects: They are commonly used in hobbyist and DIY electronics projects.
Specifications
Status | Active | Case Outline | 419B-02 |
MSL Temp (°C) | 260 | Container Type | REEL |
Product Category | Bipolar Transistors - BJT | Mounting Style | SMD/SMT |
Transistor Polarity | NPN | Configuration | Dual |
Collector- Emitter Voltage VCEO Max | 40 V | Collector- Base Voltage VCBO | 60 V |
Emitter- Base Voltage VEBO | 6 V | Collector-Emitter Saturation Voltage | 300 mV |
Maximum DC Collector Current | 200 mA | Pd - Power Dissipation | 150 mW |
Gain Bandwidth Product fT | 300 MHz | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Series | MBT3904DW1 |
Continuous Collector Current | - 2 A | DC Collector/Base Gain hfe Min | 40 |
Height | 0.9 mm | Length | 2 mm |
Product Type | BJTs - Bipolar Transistors | Factory Pack Quantity | 3000 |
Subcategory | Transistors | Technology | Si |
Width | 1.25 mm | Part # Aliases | MBT3904DW1T3G |
Unit Weight | 0.000988 oz |
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MBT3904DW1T1G Datasheet PDF
MBT3904DW1T1G PDF Preview
In Stock: 5,970
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
---|---|---|
20+ | $0.016 | $0.32 |
200+ | $0.014 | $2.80 |
600+ | $0.013 | $7.80 |
3000+ | $0.012 | $36.00 |
9000+ | $0.011 | $99.00 |
21000+ | $0.011 | $231.00 |
The prices below are for reference only.
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