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See Technical Specifications

MJE243G +BOM

NPN Bipolar Junction Transistor with 100V Voltage Capacity, 4A Current Rating, and 1500mW Power Dissipation in TO-225 Package

Manufacturer:

Onsemi
Mfr.Part #:

MJE243G
Datasheet:

MJE243G Datasheet (PDF)
Compliance:

PbAHP
Case Outline:

77-09
MSL Type:

NA
MSL Temp (°C):

0
EDA/CAD Models:

Request Free CAD Models for MJE243G

Email: [email protected]

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Tel: +852 95804164

MJE243G General Description

The COMPLEMENTARY SILICON POWER PLASTIC TRANSISTORS, with the product code MJE243G, are a crucial component in various electronic devices. These Power Bipolar Transistors are specifically designed to handle up to 4A of current and have a V(BR)CEO of 100V, ensuring smooth and efficient functioning within the circuit. With its NPN configuration and Silicon material construction, this transistor offers reliable performance for diverse applications

Key Features

Fast Switching Times - t_tr = 100 ns (Min)
Low Input Current @ V_CC = 2.5 Vdc
Rise Time: 10 ns (Typ) at 10% to 90%

Specifications

Status	Active	Compliance	PbAHP
Case Outline	77-09	MSL Type	NA
MSL Temp (°C)	0	Container Type	BLKBX
Container Qty.	500	ON Target	N
Polarity	NPN	Type	General Purpose
VCE(sat) Max (V)	0.6	IC Cont. (A)	4
VCEO Min (V)	100	VCBO (V)	100
VEBO (V)	7	VBE(sat) (V)	1.8
VBE(on) (V)	1.5	hFE Min	40
hFE Max	180	fT Min (MHz)	40
PTM Max (W)	15	Pricing ($/Unit)	$0.1804