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See Technical Specifications

MJW21196 +BOM

Suitable for general-purpose switching and amplification need

Manufacturer:

Onsemi
Mfr.Part #:

MJW21196
Datasheet:

MJW21196 Datasheet (PDF)
Mounting Style:

Through Hole
Transistor Polarity:

PNP
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

250 V
EDA/CAD Models:

Request Free CAD Models for MJW21196

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MJW21196 General Description

Designed with precision engineering in mind, the MJW21196 NPN Bipolar Complementary Audio Power Transistor stands out as a superior choice for those seeking optimal performance in their audio equipment. The Perforated Emitter technology used in this transistor ensures efficient power handling and reliable operation in various high-power applications. Whether used in audio amplifiers or disk head positioners, this transistor guarantees exceptional audio quality and precise control for linear applications

Key Features

Low Dropout Voltage
Fast Switching Time
Pin Compatible Packages

Specifications

Product Category	Bipolar Transistors - BJT	Mounting Style	Through Hole
Transistor Polarity	PNP	Configuration	Single
Collector- Emitter Voltage VCEO Max	250 V	Collector- Base Voltage VCBO	400 V
Emitter- Base Voltage VEBO	5 V	Collector-Emitter Saturation Voltage	1 V
Maximum DC Collector Current	16 A	Pd - Power Dissipation	200 W
Gain Bandwidth Product fT	4 MHz	Minimum Operating Temperature	- 65 C
Maximum Operating Temperature	+ 150 C	Continuous Collector Current	16 A
DC Collector/Base Gain hfe Min	20	Height	21.08 mm
Length	16.26 mm	Product Type	BJTs - Bipolar Transistors
Factory Pack Quantity	30	Subcategory	Transistors
Technology	Si	Width	5.3 mm
Unit Weight	1.340411 oz