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MMBT2907A-7-F +BOM

PNP Transistor with a Voltage Rating of 60V and Current Rating of 0.6A in SOT-23 Package

Manufacturer:

Central Semiconductor
Mfr.Part #:

MMBT2907A-7-F
Datasheet:

MMBT2907A-7-F Datasheet (PDF)
Transistor Polarity:

PNP
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

60 V
Collector- Base Voltage VCBO:

60 V
EDA/CAD Models:

Request Free CAD Models for MMBT2907A-7-F

MMBT2907A-7-F General Description

Bipolar (BJT) Transistor PNP 60 V 600 mA 200MHz 300 mW Surface Mount SOT-23-3

Key Features

Description:The MMBT2907A-7-F is a PNP bipolar junction transistor (BJT) in a small surface-mount package. It is designed for use in low-power switching and amplifier applications.Features:• Low-power switching and amplifier applications• PNP bipolar junction transistor• Small surface-mount package• Maximum collector current of 0.6 A• Maximum collector-emitter voltage of 60 V• Maximum power dissipation of 300 mW• Operating temperature range of -55°C to +150°C• TO-236-3, SC-59, SOT-23-3 packageApplications:The MMBT2907A-7-F is suitable for use in low-power switching and amplifier applications, such as audio amplifiers, motor control, and power management. It can also be used in automotive, consumer, and industrial applications.

Specifications

Product Category	Bipolar Transistors - BJT	Transistor Polarity	PNP
Configuration	Single	Collector- Emitter Voltage VCEO Max	60 V
Collector- Base Voltage VCBO	60 V	Emitter- Base Voltage VEBO	5 V
Maximum DC Collector Current	600 mA	Pd - Power Dissipation	300 mW
Gain Bandwidth Product fT	200 MHz	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	DC Collector/Base Gain hfe Min	75 at 100 uA, 10 V
Product Type	BJTs - Bipolar Transistors	Subcategory	Transistors
Technology	Si