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See Technical Specifications

MMBTA13LT1G +BOM

NPN Bipolar Darlington Transistor

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

MMBTA13LT1G
Datasheet:

MMBTA13LT1G Datasheet (PDF)
Transistor Type:

NPN - Darlington
Current - Collector (Ic) (Max):

300 mA
Voltage - Collector Emitter Breakdown (Max):

30 V
Vce Saturation (Max) @ Ib, Ic:

1.5V @ 100µA, 100mA
EDA/CAD Models:

Request Free CAD Models for MMBTA13LT1G

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MMBTA13LT1G General Description

The MMBTA13LT1G is a high-quality NPN Bipolar Darlington Transistor perfect for a variety of switching applications. Whether you need to control a print hammer, relay, solenoid, or lamp driver, this transistor is up to the task

Key Features

Compact Design Saves Space
Faster Switching Time for Higher Efficiency
Suitable for Wide Temperature Range Applications

Specifications

Category	Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single Bipolar Transistors	Series	-
Transistor Type	NPN - Darlington	Current - Collector (Ic) (Max)	300 mA
Voltage - Collector Emitter Breakdown (Max)	30 V	Vce Saturation (Max) @ Ib, Ic	1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max)	100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce	10000 @ 100mA, 5V
Power - Max	225 mW	Frequency - Transition	125MHz
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	MMBTA13