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NPN RF Transistor
SOT-23Manufacturer:
Mfr.Part #:
MMBT5179
Datasheet:
Transistor Type:
NPN
Voltage - Collector Emitter Breakdown (Max):
12V
Frequency - Transition:
2GHz
Noise Figure (dB Typ @ F):
5dB @ 200MHz
EDA/CAD Models:
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Designed for high-speed switching applications, MMBT5179 features a transition frequency (ft) of 150MHz and a low saturation voltage, which contributes to minimizing power loss during operation. With a total power dissipation of 300mW and a DC current gain (hFE) ranging from 100 to 300, this small signal transistor is a reliable choice for electronic circuits requiring efficient performance in a compact package
Category | Discrete Semiconductor ProductsTransistorsBipolar (BJT)Bipolar RF Transistors | Series | - |
Transistor Type | NPN | Voltage - Collector Emitter Breakdown (Max) | 12V |
Frequency - Transition | 2GHz | Noise Figure (dB Typ @ f) | 5dB @ 200MHz |
Gain | 15dB | Power - Max | 225mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 3mA, 1V | Current - Collector (Ic) (Max) | 50mA |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | MMBT5179 | Product Category | RF Bipolar Transistors |
Technology | Si | Transistor Polarity | NPN |
Operating Frequency | 2000 MHz | DC Collector/Base Gain hfe Min | 25 |
Collector- Emitter Voltage VCEO Max | 12 V | Emitter- Base Voltage VEBO | 2.5 V |
Continuous Collector Current | 50 mA | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Configuration | Single |
Mounting Style | SMD/SMT | Collector- Base Voltage VCBO | 20 V |
DC Current Gain hFE Max | 250 | Gain Bandwidth Product fT | 2000 MHz |
Height | 0.93 mm | Length | 2.92 mm |
Maximum DC Collector Current | 50 mA | Pd - Power Dissipation | 225 mW |
Product Type | RF Bipolar Transistors | Factory Pack Quantity | 3000 |
Subcategory | Transistors | Type | RF Bipolar Small Signal |
Width | 1.3 mm | Part # Aliases | MMBT5179_NL |
Unit Weight | 0.000282 oz |
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