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See Technical Specifications

MMBT3904-7-F +BOM

High-performance power device with a small SOT packag

Manufacturer:

Diodes Incorporated
Mfr.Part #:

MMBT3904-7-F
Datasheet:

MMBT3904-7-F Datasheet (PDF)
Mounting Style:

SMD/SMT
Transistor Polarity:

NPN
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

40 V
EDA/CAD Models:

Request Free CAD Models for MMBT3904-7-F

MMBT3904-7-F General Description

The MMBT3904-7-F stands out as a versatile NPN bipolar junction transistor (BJT) engineered for a myriad of electronic applications. With a stout collector current rating of 200mA and a power dissipation of 350mW, it proves robust enough for diverse circuit requirements. Encased in a compact SOT-23 surface-mount package, its integration into space-constrained electronic devices is seamless

Key Features

High-Speed Diode
Low-Noise Amplifier
Surface-Mount Transistor
Miniature Power Device
Pulse-Width Modulator
Monolithic IC Package

Application

Low voltage signal booster
Sensor buffering & switching
Audio amplification device
Communication signal processing
Portable device amplifier
Electronic circuit switch

Specifications

Product Category	Bipolar Transistors - BJT	Mounting Style	SMD/SMT
Transistor Polarity	NPN	Configuration	Single
Collector- Emitter Voltage VCEO Max	40 V	Collector- Base Voltage VCBO	60 V
Emitter- Base Voltage VEBO	6 V	Collector-Emitter Saturation Voltage	300 mV
Maximum DC Collector Current	200 mA	Pd - Power Dissipation	310 mW
Gain Bandwidth Product fT	300 MHz	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Series	MMBT3904
Continuous Collector Current	200 mA	DC Current Gain hFE Max	300
Height	1 mm	Length	3.05 mm
Product Type	BJTs - Bipolar Transistors	Factory Pack Quantity	3000
Subcategory	Transistors	Technology	Si
Width	1.4 mm	Unit Weight	0.000282 oz