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MMBTA06-7-F +BOM

Explore the MMBTA06-7-F, an NPN Bipolar Transistor by Diodes Inc, designed to handle currents up to 0

MMBTA06-7-F General Description

Bipolar (BJT) Transistor NPN 80 V 500 mA 100MHz 300 mW Surface Mount SOT-23-3

Key Features

HIGH RELIABILITY

Application

SWITCHING

Specifications

Pbfree Code Yes Part Life Cycle Code Active
Pin Count 3 Reach Compliance Code compliant
ECCN Code EAR99 Factory Lead Time 42 Weeks
Additional Feature HIGH RELIABILITY Collector Current-Max (IC) 0.5 A
Collector-Emitter Voltage-Max 80 V Configuration SINGLE
DC Current Gain-Min (hFE) 100 JESD-30 Code R-PDSO-G3
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 3
Operating Temperature-Max 150 °C Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN Power Dissipation-Max (Abs) 0.3 W
Qualification Status Not Qualified Surface Mount YES
Terminal Finish MATTE TIN Terminal Form GULL WING
Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING Transistor Element Material SILICON
Transition Frequency-Nom (fT) 100 MHz

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