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MRF174 +BOM

High-frequency amplifier for wireless communication systems with high power gain and low noise figur

MRF174 General Description

RF Mosfet 28 V 2 A 150MHz 11.8dB 125W 211-11, Style 2

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Key Features

  • N–Channel Enhancement Mode MOSFET
  • 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWRTesdtedc
  • Facilitates Manual Gain Control, ALC and Modulation Techniques
  • Excellent Thermal Stability; ideally Suite for Class A Operations
  • Guaranteed Performance at 150 MHz, 28 Vdc: Output power = 125 W, Minimum gain = 9.0 dB,Efficiency = 50% (min.)
  • Low Noise Figure — 3.0 dB (Typ.) at 2.0 A, 150 MHz
  • Aerospace and Defense
  • ISM
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Application

  • Min Frequency: 5 MHz
  • Gain: 9 dB
  • Efficiency: 50 %
  • Pout: 125 W
  • Max Frequency: 200 MHz
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Specifications

Product Category RF MOSFET Transistors Transistor Polarity N-Channel
Technology Si Id - Continuous Drain Current 13 A
Vds - Drain-Source Breakdown Voltage 65 V Rds On - Drain-Source Resistance 2.5 mOhms
Operating Frequency 200 MHz Gain 11.8 dB
Output Power 125 W Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 200 C Mounting Style SMD/SMT
Configuration Single Pd - Power Dissipation 270 W
Product Type RF MOSFET Transistors Factory Pack Quantity 10
Subcategory MOSFETs Type RF Power MOSFET
Vgs - Gate-Source Voltage 40 V Vgs th - Gate-Source Threshold Voltage 3 V

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Ratings and Reviews

More
J
J**e 08/24/2022

Very fast shipping. Seller recommend.

11
N
N**s 11/24/2021

I take the second time since last time i confused polarity and everything burned :) this time the seller sent all the fees separately. It's uncomfortable for me.

17
G
G**n 09/25/2021

Fast delivery, and so diodes as diodes)

1
M
M**l 08/28/2020

Board is well made. Unfortunately the connector holes are too small diameter to use standoffs, it would be useful if boards such as these included connection holes to allow use of external leds when board is located in an enclosure.

3

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