This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

MRF6S18060NR1 +BOM

RF Mosfet 26 V 600 mA 1.99GHz 15dB 60W TO-270 WB-4

Manufacturer:

NXP Semiconductor
Mfr.Part #:

MRF6S18060NR1
Datasheet:

MRF6S18060NR1 Datasheet (PDF)
Technology:

LDMOS
Frequency:

1.99GHz
Gain:

15dB
Voltage - Test:

26 V
EDA/CAD Models:

Request Free CAD Models for MRF6S18060NR1

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

MRF6S18060NR1 General Description

Ideal for high-power RF applications, the MRF6S18060NR1 exhibits a prowess that is unrivaled in the realm of cellular base stations, wireless infrastructure, radar systems, and other communications systems. With a wide frequency range of 1805-1880 MHz and a robust power output of 60 watts, this N-channel MOSFET transistor is a reliable choice for RF power amplification. Its exceptional power gain, efficiency, and ruggedness qualities make it the perfect fit for demanding communication systems

Key Features

Frequency range: 1805-1880 MHz
Output power: 60 W
Efficiency: 30%
Voltage: 28 V
Package: NI-1230

Application

Wireless infrastructure
ISM
Broadcast
Radar

Specifications

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsRF FETs, MOSFETs	Series	-
Technology	LDMOS	Frequency	1.99GHz
Gain	15dB	Voltage - Test	26 V
Current Rating (Amps)	-	Noise Figure	-
Current - Test	600 mA	Power - Output	60W
Voltage - Rated	68 V	Mounting Type	Surface Mount
Base Product Number	MRF6	Product Category	RF MOSFET Transistors
Transistor Polarity	N-Channel	Vds - Drain-Source Breakdown Voltage	68 V
Operating Frequency	1.8 GHz to 2 GHz	Output Power	60 W
Minimum Operating Temperature	- 65 C	Maximum Operating Temperature	+ 150 C
Mounting Style	SMD/SMT	Channel Mode	Enhancement
Configuration	Single	Height	2.64 mm
Length	17.58 mm	Moisture Sensitive	Yes
Pd - Power Dissipation	21.6 W	Product Type	RF MOSFET Transistors
Factory Pack Quantity	500	Subcategory	MOSFETs
Type	RF Power MOSFET	Vgs - Gate-Source Voltage	- 500 mV, 12 V
Vgs th - Gate-Source Threshold Voltage	3 V	Width	9.07 mm
Part # Aliases	935319261528	Unit Weight	0.058073 oz