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MRFE6VP6600NR3 +BOM

Wideband RF Power LDMOS Transistor, 1.8-600 MHz, 600 W CW, 50 V

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MRFE6VP6600NR3 General Description

RF Mosfet 50 V 100 mA 230MHz 24.7dB 600W OM-780-4L

NXP Semiconductor Inventory

Key Features

Wideband RF Power LDMOS Transistor, 1.8-600 MHz, 600 W CW, 50 V
NXP Semiconductor Original Stock
NXP Semiconductor Inventory

Specifications

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsRF FETs, MOSFETs Series -
Technology LDMOS Configuration Dual
Frequency 230MHz Gain 24.7dB
Voltage - Test 50 V Current Rating (Amps) -
Noise Figure - Current - Test 100 mA
Power - Output 600W Voltage - Rated 133 V
Mounting Type Surface Mount Base Product Number MRFE6

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MRFE6VP6600NR3 Datasheet PDF

Preliminary Specification MRFE6VP6600NR3 PDF Download

MRFE6VP6600NR3 PDF Preview

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