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MRF1K50HR5 +BOM

RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1500 W CW, 1.8-500 MHz, 50 V

MRF1K50HR5 General Description

NXP's MRF1K50HR5 boasts a high gain of over 22 dB and an impressive efficiency of up to 74%, setting it apart from other transistors in its class. Its low thermal resistance of 0.08 °C/W allows for efficient heat dissipation, preventing overheating and ensuring consistent performance. Housed in a high-performance ceramic package, this transistor offers excellent thermal stability and RF performance, along with built-in ESD protection to safeguard against electrostatic discharge damage

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Key Features

  • Magnetization Saturation: 12.5 kA/m
  • Magnetic Induction: 1.2 T
  • Permeability: 150 μ
  • Magnetic Flux Density: 800 A/m
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Application

  • Setting new standards
  • Unleashing potential
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Specifications

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsRF FETs, MOSFETs Series -
Technology LDMOS Frequency 1.8MHz ~ 500MHz
Gain 22.5dB Current Rating (Amps) -
Noise Figure - Power - Output 1500W
Voltage - Rated 50 V Mounting Type Chassis Mount
Base Product Number MRF1K50
Image Thumbnail - NI-1230H-4S Package Image

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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Ratings and Reviews

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J
J**n 03/17/2021

The goods came very quickly. But in one of the 5 packages the camera was neokozazazazazazazazazazazze, and one of the 4 cameras did not work.

19
I
I**c 12/17/2020

took a while but I've got it really please thanks

13
T
T**r 10/11/2020

Great Item, delivery less than 40 days to Macedonia, so far so good, still not tested. After testing I will inform you about working condition in additional commentsHighly recommended, Thank you seller.

19

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MRF1K50HR5 Datasheet PDF

Preliminary Specification MRF1K50HR5 PDF Download

MRF1K50HR5 PDF Preview

In Stock: 4,461

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