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See Technical Specifications

MRF392 +BOM

Operating at V, this transistor delivers robust gain and stabilit

Manufacturer:

Macom
Mfr.Part #:

MRF392
Datasheet:

MRF392 Datasheet (PDF)
Transistor Type:

Bipolar Power
Technology:

Si
Operating Frequency:

500 MHz
DC Collector/Base Gain Hfe Min:

40

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

MRF392 General Description

Encased in a TO-270 package, the MRF392 ensures efficient heat dissipation due to its excellent thermal conductivity. The package design also facilitates easy mounting and handling during installation processes. Additionally, the MRF392 boasts a high breakdown voltage of up to 65V, coupled with low thermal resistance, thereby enhancing its reliability and functionality even under demanding high-power conditions. Its low input and output capacitance further contribute to its efficacy in high-frequency applications

Key Features

1. Low voltage drop for improved efficiency
2. High current handling capacity
3. Wide temperature operating range
4. Stable performance over time

Application

Signal boosting in cellular networks
Transmitting data in satellite links
Enhancing radar performance

Specifications

Product Category	RF Bipolar Transistors	Transistor Type	Bipolar Power
Technology	Si	Operating Frequency	500 MHz
DC Collector/Base Gain hfe Min	40	Collector- Emitter Voltage VCEO Max	30 V
Emitter- Base Voltage VEBO	4 V	Continuous Collector Current	16 A
Minimum Operating Temperature	- 65 C	Maximum Operating Temperature	+ 150 C
Configuration	Dual	Mounting Style	Screw Mount
Pd - Power Dissipation	270 W	Product Type	RF Bipolar Transistors
Factory Pack Quantity	20	Subcategory	Transistors
Type	RF Bipolar Power	Unit Weight	0.678685 oz