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See Technical Specifications

MUN5235T1G +BOM

NPN Bipolar Digital Transistor (BRT)

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

MUN5235T1G
Datasheet:

MUN5235T1G Datasheet (PDF)
Case Outline:

419-04
MSL Temp (°C):

260
Container Type:

REEL
Configuration:

Single
EDA/CAD Models:

Request Free CAD Models for MUN5235T1G

MUN5235T1G General Description

The MUN5235T1G digital transistor is a game-changer in electronic circuit design, offering a convenient solution for engineers and designers looking to streamline their projects. With its monolithic bias network, this Bias Resistor Transistor (BRT) combines the functionality of multiple components into a single compact device. By simplifying the circuitry and reducing the number of external resistors required, the MUN5235T1G helps optimize efficiency and cost-effectiveness in system design

Key Features

Improves Motor Control
Increases Reliability
Enhances Audio Quality
Streamlines Network Traffic
Reduces EMI Interference
Promotes High-Speed Data Transfer

Application

Logic Switch
Automotive Infotainment & Clusters
Automotive Braking

Specifications

Status	Active	Case Outline	419-04
MSL Temp (°C)	260	Container Type	REEL
Product Category	Bipolar Transistors - Pre-Biased	Configuration	Single
Transistor Polarity	NPN	Typical Input Resistor	2.2 kOhms
Typical Resistor Ratio	0.047	Mounting Style	SMD/SMT
DC Collector/Base Gain hfe Min	80	Collector- Emitter Voltage VCEO Max	50 V
Continuous Collector Current	100 mA	Peak DC Collector Current	100 mA
Pd - Power Dissipation	202 mW	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Series	DTC123J
DC Current Gain hFE Max	80	Height	0.85 mm
Length	2.1 mm	Product Type	BJTs - Bipolar Transistors - Pre-Biased
Factory Pack Quantity	3000	Subcategory	Transistors
Width	1.24 mm	Unit Weight	0.000219 oz