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MW4IC915NBR1 +BOM

GSM/GSM EDGE, N-CDMA RF LDMOS Wideband Integrated Power Amplifier, 860-960 MHz, 15 W, 26 V

MW4IC915NBR1 General Description

RF Amplifier IC Cellular, CDMA, EDGE, GSM, TDMA, WCDMA 750MHz ~ 1GHz TO-272 WB-16

NXP Semiconductor Inventory

Key Features

GSM/GSM EDGE, N-CDMA RF LDMOS Wideband Integrated Power Amplifier, 860-960 MHz, 15 W, 26 V
NXP Semiconductor Original Stock
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Specifications

Security Status COMPANY PUBLIC Description GSM/GSM EDGE, N-CDMA RF LDMOS Wideband Integrated Power Amplifier, 860-960 MHz, 15 W, 26 V
Number of pins 16 Product Category RF Amplifier
Mounting Style SMD/SMT Type Power Amplifiers
Technology Si Operating Frequency 1 GHz
Gain 30 dB Qualification AEC-Q100
Series MW4IC915N Input Return Loss 15 dB
Moisture Sensitive Yes Number of Channels 1 Channel
Product Type RF Amplifier Factory Pack Quantity 500
Subcategory Wireless & RF Integrated Circuits Supply Voltage - Max 28 V
Supply Voltage - Min 26 V Unit Weight 0.067454 oz

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MW4IC915NBR1 Datasheet PDF

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