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MW7IC2725GNR1 +BOM

Single-ended power amplifier with wideband capabilities

Manufacturer:

NXP
Mfr.Part #:

MW7IC2725GNR1
Datasheet:

MW7IC2725GNR1 Datasheet (PDF)
Mounting Style:

SMD/SMT
Type:

Power Amplifiers
Technology:

Si
Operating Frequency:

2.7 GHz
EDA/CAD Models:

Request Free CAD Models for MW7IC2725GNR1

MW7IC2725GNR1 General Description

Whether you're working on wireless infrastructure, radar systems, or satellite communications, the MW7IC2725GNR1 is the ideal solution for your high-power RF needs. With its high power output, wide supply voltage range, and compact form factor, this transistor is designed to meet the demands of modern RF applications. Plus, its advanced GaN technology means you can count on superior performance, exceptional efficiency, and reliable operation, even in harsh environments

Key Features

100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large-Signal Impedance Parameters
and Common Source S-Parameters
On-Chip Matching (50 Ohm Input, DC Blocked)
Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function (1)
Integrated ESD Protection
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

Specifications

Product Category	RF Amplifier	Mounting Style	SMD/SMT
Type	Power Amplifiers	Technology	Si
Operating Frequency	2.7 GHz	Gain	28.5 dB
Minimum Operating Temperature	- 65 C	Maximum Operating Temperature	+ 225 C
Series	MW7IC2725N	Input Return Loss	15 dB
Moisture Sensitive	Yes	Number of Channels	1 Channel
Product Type	RF Amplifier	Factory Pack Quantity	500
Subcategory	Wireless & RF Integrated Circuits	Supply Voltage - Max	32 V
Supply Voltage - Min	26 V	Part # Aliases	935321293528
Unit Weight	0.056385 oz