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MW7IC2240NBR1 +BOM

TO-272WB-16 package RF amplifier for 2GHz to 2.2GHz WCDMA applications

Manufacturer:

NXP
Mfr.Part #:

MW7IC2240NBR1
Datasheet:

MW7IC2240NBR1 Datasheet (PDF)
Mounting Style:

SMD/SMT
Type:

Power Amplifiers
Technology:

Si
Gain:

30 dB
EDA/CAD Models:

Request Free CAD Models for MW7IC2240NBR1

MW7IC2240NBR1 General Description

Revolutionize your wideband applications with the MW7IC2240NBR1, a high-power GaN RF transistor that's redefining efficiency and performance. Operating flawlessly in the 1.2 to 2.7 GHz frequency range, this transistor is a powerhouse in cellular base stations, small cells, and repeaters, offering high linearity and output power levels of up to 40 watts. Its integrated matching network and compact package make system design and layout a breeze, streamlining your development process and reducing costs. And with its robust design, you can trust this transistor to deliver reliability in even the harshest operating conditions, making it the ideal choice for demanding wireless infrastructure applications

Key Features

Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source Scattering Parameters
On-Chip Matching (50 Ohm Input, DC Blocked,>3 Ohm Output)
Integrated Quiescent Current Temperature Compensation with Enable/ Disable Function (1)
Integrated ESD Protection
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

Specifications

Product Category	RF Amplifier	Mounting Style	SMD/SMT
Type	Power Amplifiers	Technology	Si
Gain	30 dB	Operating Supply Current	420 mA
Maximum Operating Temperature	+ 225 C	Qualification	AEC-Q100
Series	MW7IC2240N	Input Return Loss	16 dB
Moisture Sensitive	Yes	Number of Channels	1 Channel
Product Type	RF Amplifier	Factory Pack Quantity	500
Subcategory	Wireless & RF Integrated Circuits	Supply Voltage - Max	32 V
Supply Voltage - Min	24 V	Unit Weight	0.067454 oz