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MW7IC2425GNR1 +BOM

RF MOSFET Transistors HV7 2400MHZ 4W TO270WB16G

MW7IC2425GNR1 General Description

The MW7IC2425NR1, MW7IC2425GNR1 and MW7IC2425NBR1 are designed primarily for CW large-signal output and driver applications at 2450 MHz. Devices are suitable for use in industrial, medical and scientific applications.

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Key Features

  • Typical CW Performance: VDD = 28 Volts, IDQ1 = 55 mA, IDQ2 = 195 mA, Pout = 25 Watts CW, f = 2450 MHzPower Gain: 27.7 dBPower Added Efficiency: 43.8%
  • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2450 MHz, 25 Watts CW Output Power
  • Qualified Up to a Maximum of 28 VDD Operation
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
  • Integrated ESD Protection
  • 225°C Capable Plastic Package
  • RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
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Specifications

Product Category: RF MOSFET Transistors Transistor Polarity: N-Channel
Technology: Si Vds - Drain-Source Breakdown Voltage: 65 V
Operating Frequency: 2.45 GHz Gain: 27.7 dB
Output Power: 25 W Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT
Packaging: MouseReel Channel Mode: Enhancement
Configuration: Dual Height: 2.64 mm
Length: 17.58 mm Moisture Sensitive: Yes
Pd - Power Dissipation: 25 W Product Type: RF MOSFET Transistors
Series: MW7IC2425N Factory Pack Quantity: 500
Subcategory: MOSFETs Type: RF Power MOSFET
Vgs - Gate-Source Voltage: 10 V Vgs th - Gate-Source Threshold Voltage: 1.9 V
Width: 9.07 mm Part # Aliases: 935319487528
Unit Weight: 0.056385 oz

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