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See Technical Specifications

MW7IC008NT1 +BOM

RF LDMOS Wideband Integrated Power Amplifier, 100-1000 MHz, 8 W Peak, 28 V

Manufacturer:

NXP Semiconductor
Mfr.Part #:

MW7IC008NT1
Datasheet:

MW7IC008NT1 Datasheet (PDF)
Frequency:

100MHz ~ 1GHz
P1dB:

40.4dBm
Gain:

23.5dB
RF Type:

General Purpose
EDA/CAD Models:

Request Free CAD Models for MW7IC008NT1

MW7IC008NT1 General Description

Designed with built-in protection features, the MW7IC008NT1 ensures reliable operation and long-term durability, giving users peace of mind when it comes to system reliability. Additionally, the amplifier requires a supply voltage of 10-32V and has a typical current consumption of 600 mA, making it an efficient and cost-effective solution for various applications

Key Features

RF LDMOS Wideband Integrated Power Amplifier, 100-1000 MHz, 8 W Peak, 28 V

Specifications

Category	RF and WirelessRF Amplifiers	Series	-
Frequency	100MHz ~ 1GHz	P1dB	40.4dBm
Gain	23.5dB	Noise Figure	-
RF Type	General Purpose	Voltage - Supply	32V
Current - Supply	75mA	Test Frequency	100MHz
Mounting Type	Surface Mount	Base Product Number	MW7IC008
Product Category	RF Amplifier	Mounting Style	SMD/SMT
Type	Power Amplifiers	Technology	Si
Operating Frequency	100 MHz to 1 GHz	Operating Supply Voltage	24 V to 32 V
Operating Supply Current	75 mA	Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 85 C	Input Return Loss	15 dB
Moisture Sensitive	Yes	Number of Channels	1 Channel
Product Type	RF Amplifier	Factory Pack Quantity	1000
Subcategory	Wireless & RF Integrated Circuits	Supply Voltage - Max	32 V
Supply Voltage - Min	24 V	Part # Aliases	935314113528
Unit Weight	0.014095 oz