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MWE6IC9100NBR1 +BOM

MWE6IC9 amplifies cellular signals with high power and low noise for reliable communication

Manufacturer:

Nxp
Mfr.Part #:

MWE6IC9100NBR1
Datasheet:

MWE6IC9100NBR1 Datasheet (PDF)
OrderingCode:

935316831528
IsDistributor:

false
Pack_type:

REEL
Price_flg:

N
EDA/CAD Models:

Request Free CAD Models for MWE6IC9100NBR1

MWE6IC9100NBR1 General Description

The MWE6IC9100NBR1 RF power transistor from NXP Semiconductors is a top-of-the-line silicon NPN microwave power transistor specifically designed for 900 MHz applications. With a maximum power output of 100 watts and a gain of 12 dB, this transistor is a powerhouse in its category. Operating within a frequency range of 860-960 MHz, it can handle high power levels with exceptional linearity, ensuring reliable performance in demanding conditions

Key Features

Pulse repetition frequency up to 100 kHz
Minimum pulse width of 10 ns
Peak current limit protection
Safe operating area monitoring

Application

Efficient wireless communication
Seamless signal distribution
Secure industrial networks

Specifications

orderingCode	935316831528	isDistributor	false
salesNum	MWE6IC9100NBR1	pack_type	REEL
price_flg	N	pack_desc	Reel 13" Q2/T3 in Drypack
minPackQty	500	status	No Longer Manufactured