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NTE129 +BOM

Bipolar (BJT) Transistor PNP 80 V 1 A 1.25 W Through Hole TO-39

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NTE129 General Description

Bipolar (BJT) Transistor PNP 80 V 1 A 1.25 W Through Hole TO-39

nte129 nte129

Key Features

Description:
The NTE128 (NPN) and NTE129 (PNP) are silicon complementary transistors in a TO39 type package designed primarily for amplifier and switching applications. These devices high breakdown voltages, low leakage currents, low capacity, and a beta useful over an extremely wide current range.

nte129 nte129
nte129 nte129

Specifications

place launch_date Jun 15, 2006
last_inspection_date 12 MAY 2023 supplier_cage_code 7T184
htsusa 8541290075 schedule_b 8541290080
ppap aec
Series - Transistor Type PNP
Current - Collector (Ic) (Max) 1 A Voltage - Collector Emitter Breakdown (Max) 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA Current - Collector Cutoff (Max) 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 5V Power - Max 1.25 W
Frequency - Transition - Operating Temperature -65°C ~ 200°C (TJ)
Mounting Type Through Hole

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Ratings and Reviews

More
M
M**a 03/26/2023

Received. Pending testing. very good appearance.

16
L
L**m 08/05/2021

Arrived on time, no damage. For the price i am not complaining . Very happy with purchase and grateful for the service. Thank you very much! Sincerely!!!

6
S
S**a 02/20/2021

Delivery in m.o. 1 week

5
J
J**b 08/27/2020

Delivery is fast, i order not for the first time, packed well, everything works

18

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