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NTMFS5C612NT1G-TE +BOM

N-Channel 60 V 35A (Ta), 230A (Tc) 3.8W (Ta), 170W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)

NTMFS5C612NT1G-TE General Description

N-Channel 60 V 35A (Ta), 230A (Tc) 3.8W (Ta), 170W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)

ON Semiconductor, LLC Inventory
ON Semiconductor, LLC Original Stock
ON Semiconductor, LLC Inventory

Specifications

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs Series -
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 35A (Ta), 230A (Tc)
Rds On (Max) @ Id, Vgs 1.6mOhm @ 50A, 10V Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 60.2 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4830 pF @ 25 V FET Feature -
Power Dissipation (Max) 3.8W (Ta), 170W (Tc) Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Base Product Number NTMFS5
feature-category Power MOSFET feature-material
feature-process-technology feature-configuration Single Triple Source
feature-channel-mode Enhancement feature-channel-type N
feature-number-of-elements-per-chip 1 feature-maximum-drain-source-voltage-v 60
feature-maximum-gate-source-voltage-v ±20 feature-maximum-gate-threshold-voltage-v
feature-maximum-continuous-drain-current-a 35 feature-maximum-drain-source-resistance-mohm 1.6@10V
feature-typical-gate-charge-vgs-nc 60.2@10V feature-typical-gate-charge-10v-nc
feature-typical-input-capacitance-vds-pf 4830@25V feature-typical-output-capacitance-pf
feature-maximum-power-dissipation-mw 3800 feature-packaging Tape and Reel
feature-rad-hard feature-pin-count
feature-cecc-qualified feature-esd-protection
feature-military No feature-aec-qualified No
feature-aec-qualified-number feature-auto-motive No
feature-p-pap No feature-eccn-code EAR99
feature-svhc feature-svhc-exceeds-threshold No

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