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NTH4L015N065SC1 +BOM

Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, TO-247-4L

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

NTH4L015N065SC1
Datasheet:

NTH4L015N065SC1 Datasheet (PDF)
Case Outline:

340CJ
MSL Temp (°C):

0
Container Type:

TUBE
Technology:

Si
EDA/CAD Models:

Request Free CAD Models for NTH4L015N065SC1

Email: [email protected]

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Tel: +852 95804164

NTH4L015N065SC1 General Description

The cutting-edge technology behind the Silicon Carbide (SiC) MOSFET, product NTH4L015N065SC1, provides unprecedented switching performance and reliability, surpassing that of traditional Silicon-based MOSFETs. Its low ON resistance and compact chip size result in low capacitance and gate charge, ultimately leading to superior efficiency, faster operation frequency, increased power density, reduced EMI, and a smaller system size

Key Features

High Junction Temperature
100% UIL Tested
RoHS Compliant
High Speed Switching and Low Capacitance
650V rated
Max RDS(on) = 18.7 mΩ at Vgs = 18V, Id = 60A

Application

DC-DC Converter
Boost Inverter

Specifications

Status	Active	Case Outline	340CJ
MSL Temp (°C)	0	Container Type	TUBE
Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	650 V
Id - Continuous Drain Current	142 A	Rds On - Drain-Source Resistance	18 mOhms
Vgs - Gate-Source Voltage	- 8 V, + 22 V	Vgs th - Gate-Source Threshold Voltage	4.3 V
Qg - Gate Charge	283 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	500 W
Channel Mode	Enhancement	Product Type	MOSFET
Factory Pack Quantity	30	Subcategory	MOSFETs