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See Technical Specifications

NTE159 +BOM

BIPOLAR TRANSISTOR, PNP, -80V TO-92

Manufacturer:

NTE Electronics, Inc
Mfr.Part #:

NTE159
Datasheet:

NTE159 Datasheet (PDF)
Part Life Cycle Code:

Active
Pin Count:

3
ECCN Code:

EAR99
Additional Feature:

LOW NOISE
EDA/CAD Models:

Request Free CAD Models for NTE159

Email: [email protected]

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NTE159 General Description

Bipolar Transistor, Pnp, -80V To-92; Transistor Polarity:Pnp; Collector Emitter Voltage Max:80V; Continuous Collector Current:800Ma; Power Dissipation:625Mw; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Nte Electronics NTE159

Specifications

Part Life Cycle Code	Active	Pin Count	3
Reach Compliance Code		ECCN Code	EAR99
Additional Feature	LOW NOISE	Collector Current-Max (IC)	1 A
Collector-Emitter Voltage-Max	80 V	Configuration	SINGLE
DC Current Gain-Min (hFE)	30	JEDEC-95 Code	TO-92
JESD-30 Code	O-PBCY-W3	Number of Elements	1
Number of Terminals	3	Peak Reflow Temperature (Cel)	NOT SPECIFIED
Polarity/Channel Type	PNP	Power Dissipation-Max (Abs)	0.6 W
Qualification Status	Not Qualified	Surface Mount	NO
Terminal Form	WIRE	Terminal Position	BOTTOM
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Transition Frequency-Nom (fT)	100 MHz
Turn-off Time-Max (toff)	400 ns	Turn-on Time-Max (ton)	100 ns
Series	-	Transistor Type	PNP
Current - Collector (Ic) (Max)	800 mA	Voltage - Collector Emitter Breakdown (Max)	80 V
Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 500mA	Current - Collector Cutoff (Max)	50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 10mA, 10V	Power - Max	625 mW
Frequency - Transition	-	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole