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NTE389 +BOM

High-power amplifier transistor with high voltage and current capabilitie

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NTE389 General Description

Bipolar (BJT) Transistor NPN 750 V 4 A 4MHz 100 W Through Hole TO-3

Specifications

Part Life Cycle Code Active Reach Compliance Code
ECCN Code EAR99 HTS Code 8541.29.00.95
Case Connection COLLECTOR Collector Current-Max (IC) 4 A
Collector-Emitter Voltage-Max 750 V Configuration SINGLE
DC Current Gain-Min (hFE) 5 JEDEC-95 Code TO-3
JESD-30 Code O-MBFM-P2 Number of Elements 1
Number of Terminals 2 Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN Power Dissipation Ambient-Max 100 W
Power Dissipation-Max (Abs) 100 W Qualification Status Not Qualified
Surface Mount NO Terminal Form PIN/PEG
Terminal Position BOTTOM Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING Transistor Element Material SILICON
Transition Frequency-Nom (fT) 4 MHz

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