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NVBLS0D7N06C +BOM

60V 470A 0.56mΩ@10V,80A 314W 2.8V@661uA N Channel H-PSOF-8L MOSFETs ROHS

NVBLS0D7N06C General Description

N-Channel 60 V 54A (Ta), 470A (Tc) 4.2W (Ta), 314W (Tc) Surface Mount 8-HPSOF

Key Features

  • Multicore Processor Capability
  • High Speed Data Transfer
  • Symmetric Multiprocessing
  • Advanced Error Correction
  • Low Latency Real Time Processing
  • Secure Boot and Firmware Protection

Application

  • Compact Power Conversion Unit
  • Advanced Technology Inverter

Specifications

Product Category MOSFET REACH Details
Technology Si Mounting Style SMD/SMT
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 60 V Id - Continuous Drain Current 470 A
Rds On - Drain-Source Resistance 750 uOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 4 V Qg - Gate Charge 170 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Pd - Power Dissipation 314 W Channel Mode Enhancement
Qualification AEC-Q101 Series NVBLS0D7N06C
Configuration Single Fall Time 105 ns
Forward Transconductance - Min 310 S Product Type MOSFET
Rise Time 57 ns Factory Pack Quantity 2000
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 146 ns Typical Turn-On Delay Time 37 ns

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