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See Technical Specifications

NVTFS5C658NLTAG +BOM

Single N-Channel Power MOSFET 60V, 109A, 5.0mΩ

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

NVTFS5C658NLTAG
Datasheet:

NVTFS5C658NLTAG Datasheet (PDF)
Case Outline:

511AB
MSL Temp (°C):

260
Container Type:

REEL
Technology:

Si
EDA/CAD Models:

Request Free CAD Models for NVTFS5C658NLTAG

NVTFS5C658NLTAG General Description

With a threshold voltage (Vgs) of 2.2V and a maximum operating temperature of 175°C, this MOSFET is designed to meet the rigorous requirements of the automotive industry. It complies with the AEC-Q101 automotive qualification standard and has an MSL rating of MSL 1 - Unlimited. Additionally, it is free from lead (Pb), making it environmentally friendly and compliant with the latest regulations

Key Features

Ultra-High Speed (20 Gbps)
Low Power Consumption (30 μW)
Silicon-Based Technology
Nano-Scale Dimension (0.2 μm)
AEC−Q100 Qualified and PPAP Capable
Ruggedized for High-Temperature Operations

Application

Emergency Stop
DC/DC Converters
Current Limiting

Specifications

Status	Active	Case Outline	511AB
MSL Temp (°C)	260	Container Type	REEL
Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	109 A	Rds On - Drain-Source Resistance	4.2 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	1.2 V
Qg - Gate Charge	27 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	114 W
Channel Mode	Enhancement	Qualification	AEC-Q101
Series	NVTFS5C658NL	Configuration	Single
Fall Time	105 ns	Forward Transconductance - Min	100 S
Product Type	MOSFET	Rise Time	96 ns
Factory Pack Quantity	1500	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	36 ns
Typical Turn-On Delay Time	16 ns	Unit Weight	0.000600 oz