This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

NZT660 +BOM

Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin

Manufacturer:

ONSEMI
Mfr.Part #:

NZT660
Datasheet:

NZT660 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for NZT660

NZT660 General Description

The NZT660 transistor is a high-quality PNP transistor designed for low saturation and high efficiency. With a voltage rating of 60V and a maximum current of 3mA, this transistor is suitable for a wide range of electronic applications. The SOT-223 case style ensures easy installation and reliability in a variety of circuit configurations. With a minimum hfe of 100 and a maximum Ic hFE of 0.5A, the NZT660 offers excellent performance and stability. Additionally, this transistor is RoHS compliant, making it environmentally friendly and safe for use in various electronic devices and systems

Application

This product is general usage and suitable for many different applications.

Specifications

Source Content uid	NZT660	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	Factory Lead Time	4 Weeks
Case Connection	COLLECTOR	Collector Current-Max (IC)	3 A
Collector-Emitter Voltage-Max	60 V	Configuration	SINGLE
DC Current Gain-Min (hFE)	100	JESD-30 Code	R-PDSO-G4
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	4
Operating Temperature-Max	150 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	PNP	Power Dissipation-Max (Abs)	2 W
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	MATTE TIN	Terminal Form	GULL WING
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Element Material	SILICON	Transition Frequency-Nom (fT)	75 MHz