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PBSS5160PAPSX +BOM

60 V, 1 A PNP/PNP low VCEsat (BISS) transistor

PBSS5160PAPSX General Description

PNP/PNP low V Breakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.

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Key Features

  • Very low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain hFE at high IC
  • Reduced Printed-Circuit Board (PCB) requirements
  • Exposed heat sink for excellent thermal and electrical conductivity
  • High energy efficiency due to less heat generation
  • Suitable for Automatic Optical Inspection (AOI) of solder joints
  • AEC-Q101 qualified
NEXPERIA Original Stock

Application

  • Load switch
  • Battery-driven devices
  • Power management
  • Charging circuits
  • LED lighting
  • Power switches (e.g. motors, fans)
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