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See Technical Specifications

PHB32N06LT,118 +BOM

N-Channel 60 V 34A (Tc) 97W (Tc) Surface Mount D2PAK

Manufacturer:

Nexperia
Mfr.Part #:

PHB32N06LT,118
Datasheet:

PHB32N06LT,118 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for PHB32N06LT,118

PHB32N06LT,118 General Description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Key Features

Robust design for high-reliability operation
Suitable for automotive and industrial control systems
Fully functional at 5V supply

Application

Switching applications

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	34 A	Rds On - Drain-Source Resistance	37 mOhms
Vgs - Gate-Source Voltage	- 15 V, + 15 V	Vgs th - Gate-Source Threshold Voltage	2 V
Qg - Gate Charge	17 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	97 W
Channel Mode	Enhancement	Product Type	MOSFET
Factory Pack Quantity	800	Subcategory	MOSFETs
Part # Aliases	934056954118	Unit Weight	0.139332 oz