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PHPT61002PYCLHX +BOM

PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.NPN complement: PHPT61002NYCLH.

  • Manufacturer:

    Nexperia

  • Mfr.Part #:

    PHPT61002PYCLHX

  • Datasheet:

    PHPT61002PYCLHX Datasheet (PDF) pdf-icon

  • Mounting Style:

    SMD/SMT

  • Transistor Polarity:

    PNP

  • Configuration:

    Single

  • Collector- Emitter Voltage VCEO Max:

    100 V

PHPT61002PYCLHX General Description

PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.NPN complement: PHPT61002NYCLH.

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Key Features

  • Very low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain hFE at high IC
  • Reduced Printed-Circuit Board (PCB) requirements
  • High efficiency due to less heat generation
  • AEC-Q101 qualified
Nexperia Original Stock

Application

  • Load switch
  • Battery-driven devices
  • Power management
  • Charging circuits
  • Power switches (e.g. motors, fans)
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Specifications

Product Category Bipolar Transistors - BJT Mounting Style SMD/SMT
Transistor Polarity PNP Configuration Single
Collector- Emitter Voltage VCEO Max 100 V Collector- Base Voltage VCBO 100 V
Emitter- Base Voltage VEBO 8 V Collector-Emitter Saturation Voltage 300 mV
Maximum DC Collector Current 2 A Pd - Power Dissipation 25 W
Gain Bandwidth Product fT 125 MHz Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Series PHPT61002
Continuous Collector Current - 2 A DC Collector/Base Gain hfe Min 70
DC Current Gain hFE Max 260 Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 1500 Subcategory Transistors
Technology Si Part # Aliases 934071079115
Unit Weight 0.002346 oz

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