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PHP23NQ11T,127 +BOM

N-channel TrenchMOS standard level FET

Manufacturer:

Nexperia
Mfr.Part #:

PHP23NQ11T,127
Datasheet:

PHP23NQ11T,127 Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for PHP23NQ11T,127

PHP23NQ11T,127 General Description

The PHP23NQ11T,127 FET is a go-to solution for engineers and manufacturers seeking a dependable transistor for their computing, communications, consumer, and industrial products. Its plastic package provides a sturdy and protective housing, while TrenchMOS technology ensures optimal performance and longevity. Whether it's powering a computer, facilitating communication, driving consumer electronics, or supporting industrial applications, this transistor delivers consistent and dependable operation

Key Features

Low EMI emissions for reduced electromagnetic interference
Compact size with minimal board space requirements
High-reliability design for extended product lifespan

Application

Customizable smart devices
Effortless home automation
Compact travel accessories

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	110 V
Id - Continuous Drain Current	23 A	Rds On - Drain-Source Resistance	70 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	4 V
Qg - Gate Charge	22 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	100 W
Channel Mode	Enhancement	Product Type	MOSFET
Factory Pack Quantity	50	Subcategory	MOSFETs
Part # Aliases	934058501127	Unit Weight	0.068784 oz