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PSMN021-100YLX +BOM

N-channel MOSFET with a logic level of 21 mΩ and 100 V in LFPAK56 package

Manufacturer:

Nexperia USA Inc.
Mfr.Part #:

PSMN021-100YLX
Datasheet:

PSMN021-100YLX Datasheet (PDF)
Part Life Cycle Code:

Active
Pin Count:

4
Reach Compliance Code:

not_compliant
Additional Feature:

AVALANCHE RATED

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

PSMN021-100YLX General Description

When it comes to high-power N-Channel MOSFETs, the PSMN021-100YLX stands out for its impressive specifications and robust design. With a continuous drain current of 49A and a drain source voltage of 100V, this transistor is well-suited for demanding applications that require high efficiency and reliable performance. The low on-resistance of 0.0168ohm, tested at a gate-source voltage of 10V, ensures minimal power loss and maximum efficiency. The SOT-669 case style with 4 pins makes it easy to integrate this MOSFET into your existing circuit designs, while the maximum operating temperature of 175°C and power dissipation of 147W make it suitable for use in a wide range of industrial and automotive applications. Additionally, the PSMN021-100YLX is compliant with MSL 1 - Unlimited standards and does not contain any SVHC as of January 2018, making it a safe and environmentally friendly choice for your next project

Key Features

Promote efficient operation in a smaller package
Maintain high reliability and low noise levels
Integrate multiple functions with reduced component count

Application

High-speed charging
Precise voltage control
Energy-efficient design

Specifications

Source Content uid	PSMN021-100YLX	Part Life Cycle Code	Active
Pin Count	4	Reach Compliance Code	not_compliant
Additional Feature	AVALANCHE RATED	Avalanche Energy Rating (Eas)	80.8 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	100 V	Drain Current-Max (ID)	49 A
Drain-source On Resistance-Max	0.022 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	MO-235	JESD-30 Code	R-PSSO-G4
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	4
Operating Mode	ENHANCEMENT MODE	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Pulsed Drain Current-Max (IDM)	197 A
Reference Standard	IEC-60134	Surface Mount	YES
Terminal Finish	TIN	Terminal Form	GULL WING
Terminal Position	SINGLE	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON