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Trans MOSFET N-CH 200V 20A 3-Pin(2+Tab) DPAK
TO-252-3Manufacturer:
PHNXP
Mfr.Part #:
PSMN130-200D
Datasheet:
Part Life Cycle Code:
Obsolete
Reach Compliance Code:
not_compliant
ECCN Code:
EAR99
Date Of Intro:
1999-04-16
EDA/CAD Models:
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Source Content uid | PSMN130-200D | Part Life Cycle Code | Obsolete |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
Date Of Intro | 1999-04-16 | Avalanche Energy Rating (Eas) | 252 mJ |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 200 V | Drain Current-Max (ID) | 20 A |
Drain-source On Resistance-Max | 0.13 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-252 | JESD-30 Code | R-PSSO-G2 |
JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 2 |
Operating Mode | ENHANCEMENT MODE | Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | N-CHANNEL | Pulsed Drain Current-Max (IDM) | 80 A |
Surface Mount | YES | Terminal Finish | TIN |
Terminal Form | GULL WING | Terminal Position | SINGLE |
Time@Peak Reflow Temperature-Max (s) | 30 | Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
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