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See Technical Specifications

PSMN1R5-30YLC +BOM

OEMs, CMs ONLY (NO BROKERS)

Manufacturer:

NXP
Mfr.Part #:

PSMN1R5-30YLC
Datasheet:

PSMN1R5-30YLC Datasheet (PDF)
Part Life Cycle Code:

Transferred
Pin Count:

235
ECCN Code:

EAR99
Additional Feature:

HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Email: [email protected]

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Tel: +852 95804164

PSMN1R5-30YLC General Description

MOSFET, N CH, 30V, 100A, LFPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0013ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.51V; Power Dissipation Pd:179W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:SOT-669; No. of Pins:4; SVHC:No SVHC (19-Dec-2012)

Key Features

High reliability Power SO8 package, qualified to 175°C
Optimised for 4.5V Gate drive utilising NextPower Superjunction technology
Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads
Ultra low Rdson and low parasitic inductance

Application

DC-to-DC converters
Lithium-ion battery protection
Load switching
Power OR-ing
Server power supplies
Sync rectifier

Specifications

Source Content uid	PSMN1R5-30YLC	Part Life Cycle Code	Transferred
Pin Count	235	Reach Compliance Code
ECCN Code	EAR99	Additional Feature	HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas)	147 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	30 V
Drain Current-Max (ID)	100 A	Drain-source On Resistance-Max	0.00205 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	MO-235
JESD-30 Code	R-PSSO-G4	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	4	Operating Mode	ENHANCEMENT MODE
Polarity/Channel Type	N-CHANNEL	Pulsed Drain Current-Max (IDM)	1008 A
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	TIN	Terminal Form	GULL WING
Terminal Position	SINGLE	Transistor Application	SWITCHING
Transistor Element Material	SILICON