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PSMN3R8-100BS +BOM

NXP PSMN3R8-100BS N-channel MOSFET, 120 A, 100 V, 3-Pin D2PAK

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PSMN3R8-100BS General Description

NXP PSMN3R8-100BS N-channel MOSFET, 120 A, 100 V, 3-Pin D2PAK

Key Features

  • High efficiency due to low switching and conduction losses
  • Robust construction for demanding applications
  • Standard level gate

Application

  • DC-to-DC converters
  • Load switching
  • Motor control
  • Server power supplies

Specifications

Source Content uid PSMN3R8-100BS Part Life Cycle Code Transferred
Pin Count 3 Reach Compliance Code
ECCN Code EAR99 Avalanche Energy Rating (Eas) 537 mJ
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V Drain Current-Max (ID) 120 A
Drain-source On Resistance-Max 0.0039 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 2
Operating Mode ENHANCEMENT MODE Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 680 A Surface Mount YES
Terminal Finish PURE TIN Terminal Form GULL WING
Terminal Position SINGLE Transistor Application SWITCHING
Transistor Element Material SILICON

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