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RF JFET Transistors DC-3.2GHz 120W 50V SSG 17.5dB GaN
SMDManufacturer:
Mfr.Part #:
QPD1008L
Datasheet:
Transistor Type:
HEMT
Technology:
GaN-on-SiC
Operating Frequency:
3.2 GHz
Gain:
17.5 dB
EDA/CAD Models:
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Avaq Semiconductor offers the highly versatile and reliable QPD1008L driver, produced by Qorvo, Inc. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.
To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the QPD1008L.
Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.
Product Category: | RF JFET Transistors | Transistor Type: | HEMT |
Technology: | GaN-on-SiC | Operating Frequency: | 3.2 GHz |
Gain: | 17.5 dB | Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 50 V | Vgs - Gate-Source Breakdown Voltage: | 145 V |
Id - Continuous Drain Current: | 4 A | Output Power: | 162 W |
Minimum Operating Temperature: | - 40 C | Maximum Operating Temperature: | + 85 C |
Pd - Power Dissipation: | 127 W | Mounting Style: | Screw Mount |
Packaging: | Tray | Configuration: | Single |
Development Kit: | QPD1008LPCB401 | Moisture Sensitive: | Yes |
Operating Temperature Range: | - 40 C to + 85 C | Product Type: | RF JFET Transistors |
Series: | QPD1008L | Factory Pack Quantity: | 25 |
Subcategory: | Transistors | Vgs th - Gate-Source Threshold Voltage: | - 2.8 V |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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The prices below are for reference only.
All bill of materials (BOM) can be sent via email to
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UJ4C075018K4S
Qorvo
750V, 18mOhm, 81A, SiC FET, CASCODE, G4, TO-247-4L, AEC-Q101, 175 Deg C
UJ4SC075006K4S
Qorvo
SICFET 750V/6mΩ Junction Field-Effect Transistor G4 Package
UF3SC120009K4S
QORVO
1200V SiC FET featuring an On-Resistance of 8.6 milliohms
UF3SC065007K4S
Qorvo
Characteristics: Suitable for applications requiring high power efficiency and reliability
UJ4C075018K3S
Qorvo
ROHS compliant 12V and 6V MOSFETs
Went without tracking about a month. Received without damage.