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See Technical Specifications

QPD1010 +BOM

RF JFET Transistors DC-4GHz 10W 28-50V SSG 25dB PAE 70% GaN

Manufacturer:

Qorvo, Inc
Mfr.Part #:

QPD1010
Datasheet:

QPD1010 Datasheet (PDF)
Transistor Type:

HEMT
Technology:

GaN-on-SiC
Operating Frequency:

4 GHz
Gain:

24.7 dB
EDA/CAD Models:

Request Free CAD Models for QPD1010

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

QPD1010 General Description

Qorvo's QPD1010 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 4 GHz. The device is constructed with Qorvo's proven QGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

The device is housed in an industry-standard 3 x 3 mm surface mount QFN package.

Lead-free and ROHS compliant.

Evaluation boards are available upon request.

Key Features

Frequency range: DC - 4 GHz
Output power (P3dB): 11 W at 2 GHz
Linear gain: 24.7 dB typical at 2 GHz
Typical PAE3dB: 70% at 2 GHz
Operating voltage: 50V
Low thermal resistance package
CW and pulse capable
3 x 3 mm package

Application

Civilian Radar
Jammers
Land Mobile Radio Communications
Military Radar
Military Radio
Narrowband Amplifiers
Test Instrumentation
Wideband Amplifiers

Specifications

Product Category:	RF JFET Transistors	Transistor Type:	HEMT
Technology:	GaN-on-SiC	Operating Frequency:	4 GHz
Gain:	24.7 dB	Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	50 V	Vgs - Gate-Source Breakdown Voltage:	145 V
Id - Continuous Drain Current:	400 mA	Output Power:	11 W
Minimum Operating Temperature:	- 40 C	Maximum Operating Temperature:	+ 85 C
Pd - Power Dissipation:	13.5 W	Mounting Style:	SMD/SMT
Packaging:	Waffle	Configuration:	Single
Development Kit:	QPD1010-EVB1	Moisture Sensitive:	Yes
Operating Temperature Range:	- 40 C to + 85 C	Product Type:	RF JFET Transistors
Series:	QPD1010	Factory Pack Quantity:	50
Subcategory:	Transistors	Vgs th - Gate-Source Threshold Voltage:	- 2.8 V
Part # Aliases:	1132873	Unit Weight:	0.081130 oz