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QPD1009 +BOM

RF JFET Transistors DC-4GHz 15W 28-50V SSG 24dB PAE 72% GaN

Avaq Semiconductor offers the highly versatile and reliable QPD1009 driver, produced by Qorvo. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.

To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the  QPD1009.

Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.

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Qorvo Original Stock

Specifications

Product Category RF JFET Transistors Transistor Type HEMT
Technology GaN-on-SiC Operating Frequency 4 GHz
Gain 24 dB Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 50 V Vgs - Gate-Source Breakdown Voltage 145 V
Id - Continuous Drain Current 700 mA Output Power 17 W
Minimum Operating Temperature - 40 C Maximum Operating Temperature + 85 C
Pd - Power Dissipation 17.5 W Mounting Style SMD/SMT
Configuration Single Development Kit QPD1009-EVB1
Moisture Sensitive Yes Operating Temperature Range - 40 C to + 85 C
Product Type RF JFET Transistors Series QPD1009
Factory Pack Quantity 50 Subcategory Transistors
Vgs th - Gate-Source Threshold Voltage - 2.8 V Part # Aliases 1132865
Unit Weight 0.203046 oz Part Life Cycle Code Active
Reach Compliance Code compliant ECCN Code EAR99
Date Of Intro 2016-04-25 JESD-609 Code e4
Moisture Sensitivity Level 3 Peak Reflow Temperature (Cel) 260
Terminal Finish NICKEL PALLADIUM GOLD Time@Peak Reflow Temperature-Max (s) 30

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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In Stock: 7,072

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