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A GaN-based RF Transistor solution, designed to operate across frequencies spanning from DC to 2
Manufacturer:
Mfr.Part #:
QPD1013
Datasheet:
Transistor Type:
HEMT
Technology:
GaN-on-SiC
Moisture Sensitive:
Yes
Factory Pack Quantity:
100
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General DescriptionThe Qorvo QPD1013 is a 150 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 2.7 GHz. This is a single stage unmatched power amplifier transistor in an overmolded plastic package. The high power and wide bandwidth of the QPD1013 makes it suitable for many different applications from DC to 2.7 GHz.The device is housed in an industry-standard 7.2 x 6.6 mm surface mount DFN package.Lead-free and ROHS compliantEvaluation boards are available upon request.
Product Category | RF JFET Transistors | Transistor Type | HEMT |
Technology | GaN-on-SiC | Moisture Sensitive | Yes |
Product Type | RF JFET Transistors | Series | QPD1013 |
Factory Pack Quantity | 100 | Subcategory | Transistors |
Part # Aliases | QPD1013SR |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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