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RFK25P08 +BOM

Power Field-Effect Transistor, 25A I(D), 80V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE

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RFK25P08 General Description

Power Field-Effect Transistor, 25A I(D), 80V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE

Key Features

  • -25A, -100V and -80V
  • rDS(ON) = 0.150Ω
  • Related Literature
  • - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Specifications

Part Life Cycle Code Obsolete Reach Compliance Code
ECCN Code EAR99 HTS Code 8541.29.00.95
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V Drain Current-Max (ID) 25 A
Drain-source On Resistance-Max 0.15 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 600 pF JEDEC-95 Code TO-204AE
JESD-30 Code O-MBFM-P2 JESD-609 Code e0
Number of Elements 1 Number of Terminals 2
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Polarity/Channel Type P-CHANNEL Power Dissipation Ambient-Max 150 W
Power Dissipation-Max (Abs) 150 W Pulsed Drain Current-Max (IDM) 60 A
Qualification Status Not Qualified Surface Mount NO
Terminal Finish TIN LEAD Terminal Form PIN/PEG
Terminal Position BOTTOM Transistor Application SWITCHING
Transistor Element Material SILICON Turn-off Time-Max (toff) 650 ns
Turn-on Time-Max (ton) 300 ns

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