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RFM10P12 +BOM

Power Field-Effect Transistor, 10A I(D), 120V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

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RFM10P12 General Description

Power Field-Effect Transistor, 10A I(D), 120V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

Key Features

  • SOA is power-dissipation limited
  • Nanoseconde switching speeds
  • Linear transfer characteristics
  • High input impedance
  • Majority carrier device

Specifications

Part Life Cycle Code Obsolete Reach Compliance Code
ECCN Code EAR99 HTS Code 8541.29.00.95
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 120 V Drain Current-Max (ID) 10 A
Drain-source On Resistance-Max 0.5 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 350 pF JEDEC-95 Code TO-204AA
JESD-30 Code O-MBFM-P2 JESD-609 Code e0
Number of Elements 1 Number of Terminals 2
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Polarity/Channel Type P-CHANNEL Power Dissipation Ambient-Max 100 W
Power Dissipation-Max (Abs) 100 W Pulsed Drain Current-Max (IDM) 30 A
Qualification Status Not Qualified Surface Mount NO
Terminal Finish TIN LEAD Terminal Form PIN/PEG
Terminal Position BOTTOM Transistor Application SWITCHING
Transistor Element Material SILICON Turn-off Time-Max (toff) 325 ns
Turn-on Time-Max (ton) 200 ns

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