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RFP30P06 +BOM

P-Channel MOSFET Transistor, TO-220AB Package

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RFP30P06 General Description

P-Channel 60 V 30A (Tc) Through Hole TO-220-3

Key Features

  • 30A, 60V
  • rDS(ON) = 0.065Ω
  • Temperature Compensating PSPICE® Model
  • Peak Current vs Pulse Width Curve
  • UIS Rating Curve
  • 175oC Operating Temperature
  • Related Literature
  • - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Specifications

Product Category MOSFET Technology Si
Mounting Style Through Hole Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 30 A Rds On - Drain-Source Resistance 65 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 135 W
Channel Mode Enhancement Configuration Single
Fall Time 18 ns Height 16.3 mm
Length 10.67 mm Product Type MOSFET
Rise Time 23 ns Subcategory MOSFETs
Transistor Type 1 P-Channel Typical Turn-Off Delay Time 28 ns
Typical Turn-On Delay Time 15 ns Width 4.7 mm
Unit Weight 0.068784 oz

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