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RGT40TM65DGC9 +BOM
IGBT Transistors 650V 20A Field Stop Trench IGBT
TO-220-3-
Manufacturer:
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Mfr.Part #:
RGT40TM65DGC9
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Datasheet:
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IGBT Type:
Trench Field Stop
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Voltage - Collector Emitter Breakdown (Max):
650 V
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Current - Collector (Ic) (Max):
17 A
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Current - Collector Pulsed (Icm):
60 A
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EDA/CAD Models:
Availability: 7917 PCS
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RGT40TM65DGC9 General Description
IGBT Trench Field Stop 650 V 17 A 39 W Through Hole TO-220NFM
Specifications
Category | Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs | Series | - |
IGBT Type | Trench Field Stop | Voltage - Collector Emitter Breakdown (Max) | 650 V |
Current - Collector (Ic) (Max) | 17 A | Current - Collector Pulsed (Icm) | 60 A |
Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 20A | Power - Max | 39 W |
Switching Energy | - | Input Type | Standard |
Gate Charge | 40 nC | Td (on/off) @ 25°C | 22ns/75ns |
Test Condition | 400V, 20A, 10Ohm, 15V | Reverse Recovery Time (trr) | 58 ns |
Operating Temperature | -40°C ~ 175°C (TJ) | Mounting Type | Through Hole |
Base Product Number | RGT40 | Product Category: | IGBT Transistors |
Technology: | Si | Mounting Style: | Through Hole |
Configuration: | Single | Collector- Emitter Voltage VCEO Max: | 650 V |
Collector-Emitter Saturation Voltage: | 1.65 V | Maximum Gate Emitter Voltage: | - 30 V, 30 V |
Continuous Collector Current at 25 C: | 17 A | Pd - Power Dissipation: | 39 W |
Minimum Operating Temperature: | - 40 C | Maximum Operating Temperature: | + 175 C |
Packaging: | Tube | Gate-Emitter Leakage Current: | 200 nA |
Product Type: | IGBT Transistors | Factory Pack Quantity: | 50 |
Subcategory: | IGBTs | Part # Aliases: | RGT40TM65D |
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In Stock: 7,917
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