This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

RGT8NL65DGTL +BOM

IGBT Trench Field Stop 650 V 8 A 65 W Surface Mount LPDS

Manufacturer:

ROHM Semiconductor
Mfr.Part #:

RGT8NL65DGTL
Datasheet:

RGT8NL65DGTL Datasheet (PDF)
IGBT Type:

Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):

650 V
Current - Collector (Ic) (Max):

8 A
Current - Collector Pulsed (Icm):

12 A
EDA/CAD Models:

Request Free CAD Models for RGT8NL65DGTL

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

RGT8NL65DGTL General Description

IGBT Transistors RGT8NL65D is a Field Stop Trench IGBT with low collector - emitter saturation voltage, suitable for General Inverter, UPS, Power Conditioner, Welder.

Specifications

Category	Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs	Series	-
IGBT Type	Trench Field Stop	Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	8 A	Current - Collector Pulsed (Icm)	12 A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 4A	Power - Max	65 W
Switching Energy	-	Input Type	Standard
Gate Charge	13.5 nC	Td (on/off) @ 25°C	17ns/69ns
Test Condition	400V, 4A, 50Ohm, 15V	Reverse Recovery Time (trr)	40 ns
Operating Temperature	-40°C ~ 175°C (TJ)	Mounting Type	Surface Mount
Base Product Number	RGT8NL65	Product Category:	IGBT Transistors
Technology:	Si	Mounting Style:	SMD/SMT
Configuration:	Single	Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.65 V	Maximum Gate Emitter Voltage:	- 30 V, 30 V
Continuous Collector Current at 25 C:	8 A	Pd - Power Dissipation:	65 W
Minimum Operating Temperature:	- 40 C	Maximum Operating Temperature:	+ 175 C
Packaging:	Cut Tape	Gate-Emitter Leakage Current:	200 nA
Product Type:	IGBT Transistors	Factory Pack Quantity:	1000
Subcategory:	IGBTs	Part # Aliases:	RGT8NL65D