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RGTH50TK65GC11 +BOM
IGBT Transistors ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
TO-3PFM-
Manufacturer:
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Mfr.Part #:
RGTH50TK65GC11
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Datasheet:
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IGBT Type:
Trench Field Stop
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Voltage - Collector Emitter Breakdown (Max):
650 V
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Current - Collector (Ic) (Max):
26 A
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Current - Collector Pulsed (Icm):
100 A
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EDA/CAD Models:
Availability: 6717 PCS
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RGTH50TK65GC11 General Description
IGBT Trench Field Stop 650 V 26 A 59 W Through Hole TO-3PFM
Specifications
Category | Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs | Series | - |
IGBT Type | Trench Field Stop | Voltage - Collector Emitter Breakdown (Max) | 650 V |
Current - Collector (Ic) (Max) | 26 A | Current - Collector Pulsed (Icm) | 100 A |
Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 25A | Power - Max | 59 W |
Switching Energy | - | Input Type | Standard |
Gate Charge | 49 nC | Td (on/off) @ 25°C | 27ns/94ns |
Test Condition | 400V, 25A, 10Ohm, 15V | Operating Temperature | -40°C ~ 175°C (TJ) |
Mounting Type | Through Hole | Base Product Number | RGTH50 |
Product Category: | IGBT Transistors | Technology: | Si |
Mounting Style: | Through Hole | Configuration: | Single |
Collector- Emitter Voltage VCEO Max: | 650 V | Collector-Emitter Saturation Voltage: | 1.6 V |
Maximum Gate Emitter Voltage: | - 30 V, 30 V | Continuous Collector Current at 25 C: | 26 A |
Pd - Power Dissipation: | 59 W | Minimum Operating Temperature: | - 40 C |
Maximum Operating Temperature: | + 175 C | Packaging: | Tube |
Gate-Emitter Leakage Current: | 200 nA | Product Type: | IGBT Transistors |
Factory Pack Quantity: | 30 | Subcategory: | IGBTs |
Part # Aliases: | RGTH50TK65 |
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In Stock: 6,717
Minimum Order: 1
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